Low-voltage bulk-driven flipped voltage follower-based transconductance amplifier
نویسندگان
چکیده
A low voltage high performance design of operational transconductance amplifier is proposed in this paper. The architecture based on bulk driven quasi-floating gate metal oxide semiconductor field effect transistor (MOSFET) which supports operation and improves the gain amplifier. Besides to tail current source requirement (OTA) removed by using flipped follower structure at input pair along with MOSFET. shows a five-fold increase direct (DC) 3-fold unity bandwidth when compared its conventional architecture. (MOS) model used for 0.18 um complementary (CMOS) technology supply 0.5 V.
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ژورنال
عنوان ژورنال: Bulletin of Electrical Engineering and Informatics
سال: 2022
ISSN: ['2302-9285']
DOI: https://doi.org/10.11591/eei.v11i2.3306